BFG425W,115

NXP  BFG425W,115  晶体管 双极-射频, NPN, 4.5 V, 25 GHz, 135 mW, 25 mA, 80 hFE

The is a NPN double polysilicon Wideband Transistor with buried layer for low voltage applications in a plastic, dual-emitter package. It is designed for use with RF front end, analogue and digital cellular telephones, cordless telephones PHS, DECT, radar detectors, pagers, SATV tuners and high frequency oscillator applications.

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Very high power gain

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Low noise figure

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High transition frequency

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Emitter is thermal lead

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Low feedback capacitance