FQD10N20C

200V N沟道MOSFET 200V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary,

planar stripe, DMOS technology.

Features

• 7.8 A,200 V, RDSon = 360 mΩ Max.@ VGS = 10 V, ID= 3.9 A

• Low Gate Charge Typ.  20 nC

• Low Crss Typ. 40.5pF

• 100% Avalanche Tested