MPSW51AG

ON SEMICONDUCTOR  MPSW51AG  射频双极晶体管

has the solution to your circuit"s high-voltage requirements with their PNP general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This product comes packaged in bulk, so the parts will be stored loosely. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.