RJK2017DPE-00-J3

硅N沟道MOS FET高速电源开关 Silicon N Channel MOS FET High Speed Power Switching

Features

• Low on-resistance RDSon = 0.036 Ω typ. at ID = 22.5 A, VGS = 10 V, Ta = 25 °C

• Low leakage current

• High speed switching

Win Source:
Silicon N Channel MOS FET High Speed Power Switching