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IXDN602SI

IXDN 系列 35 V 2 A 2.5 Ohm 低压侧 超快 MOSFET 驱动器 - SOIC-8

低端 栅极驱动器 IC 非反相 8-SOIC-EP


得捷:
IC GATE DRVR LOW-SIDE 8SOIC


立创商城:
低边 IGBT MOSFET 灌:2A 拉:2A


艾睿:
Say goodbye to transistors not being provided proper biasing current by using this IXDN602SI power driver by Ixys Corporation. This device has a maximum propagation delay time of 60 ns. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device has a minimum operating supply voltage of 4.5 V and a maximum of 35 V. This gate driver has an operating temperature range of -40 °C to 125 °C.


Chip1Stop:
Driver 2A 2-OUT Lo Side Non-Inv 8-Pin SOIC EP Tube


Verical:
Driver 2A 2-OUT Low Side Non-Inv 8-Pin SOIC EP Tube


IXDN602SI PDF数据文档
图片 型号 厂商 下载
IXDN602SI IXYS Semiconductor
IXDN509SIAT/R IXYS Semiconductor
IXDN514D1T/R IXYS Semiconductor
IXDN514SIAT/R IXYS Semiconductor
IXDN604SI IXYS Semiconductor
IXDN602SIA IXYS Semiconductor
IXDN609SI IXYS Semiconductor
IXDN630CI IXYS Semiconductor
IXDN630YI IXYS Semiconductor
IXDN602PI IXYS Semiconductor
IXDN604SIATR IXYS Semiconductor