锐单电子商城 , 一站式电子元器件采购平台!
  • 电话:400-990-0325

F4-150R17ME4_B11

Trans IGBT Module N-CH 1.2kV 180A 26Pin ECONO3-4

Summary of Features:

.
H-Bridge topology
.
High power density
.
Low VCEsat
.
Tvjop = 150°C
.
Trench IGBT 4
.
VCEsat with positive temperature coefficient
.
Isolated Base Plate
.
Standard Housing

Benefits:

.
H-Bridge topology enabling compact inverter designs
.
Compact Modules
.
Easy and most reliable assembly
.
No Plugs and Cables required
.
Ideal for Low Inductive System Designs

F4-150R17ME4_B11 PDF数据文档
图片 型号 厂商 下载
F4-150R17ME4_B11 Infineon 英飞凌
F4-14 Thomas & Betts
F4-10 Thomas & Betts
F4-150R12KS4 Infineon 英飞凌
F4-100R12KS4 Infineon 英飞凌
F4-12 Triad Magnetics
F4-120 Triad Magnetics
F4-16 Triad Magnetics
F4-100R17ME4_B11 Infineon 英飞凌