TSHF5210
VISHAY TSHF5210 红外发射器, 高速, 10 °, T-1 3/4 5mm, 100 mA, 1.4 V, 30 ns, 30 ns
The is a 890nm Infrared Emitting Diode in GaAlAs double hetero DH technology. It is moulded in a clear, untinted plastic package. It is suitable for infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements.
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- High speed
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- High reliability
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- High radiant power
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- High radiant intensity
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- ϕ = ±10° Angle of half intensity
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- Low forward voltage
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- Suitable for high pulse current operation
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- Good spectral matching with Si photodetectors
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- 12MHz High modulation bandwidth fc