IPD031N03LGATMA1

DPAK N-CH 30V 90A

表面贴装型 N 通道 30 V 90A（Tc） 94W（Tc） PG-TO252-3

得捷:
MOSFET N-CH 30V 90A TO252-3

艾睿:
If you need to either amplify or switch between signals in your design, then Infineon Technologies&s; IPD031N03LGATMA1 power MOSFET is for you. Its maximum power dissipation is 94000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.

TME:
Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3

Verical:
Trans MOSFET N-CH 30V 90A 3-Pin2+Tab DPAK T/R

Newark:
# INFINEON  IPD031N03LGATMA1  MOSFET Transistor, N Channel, 90 A, 30 V, 2.6 mohm, 10 V, 1 V

Win Source:
MOSFET N-CH 30V 90A TO252-3