FQD630TM

N沟道 200V 7A

These N-Channel enhancement mode power field effect transistors are produced using "s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterrupted power supply, motor control.

Product Highlights

7A, 200V, R

DSon

= 0.4

W

@V

GS

= 10 V

Low gate charge typical 19 nC

Low Crss typical 35 pF

Fast switching

100% avalanche tested

Improved dv/dt capability