BFG21W,115

NXP BFG21W,115. 射频宽带晶体管, NPN, 4.5V, 18GHZ, 4-SOT-343R

The is an NPN Double Polysilicon Bipolar Power Transistor with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package. This UHF power transistor is suitable for linear and non-linear operations.

.: High power gain

.: High efficiency

BFG21W,115详细参数

BFG21W,115 PDF数据文档

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