BSZ440N10NS3GATMA1

INFINEON  BSZ440N10NS3GATMA1  晶体管, MOSFET, N沟道, 18 A, 100 V, 0.038 ohm, 10 V, 2.7 V

OptiMOS™3 功率 MOSFET，100V 及以上

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSZ440N10NS3GATMA1, 18 A, Vds=100 V, 8引脚 TDSON封装

得捷:
MOSFET N-CH 100V 5.3A/18A TSDSON

立创商城:
N沟道 100V 18A 5.3A

艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the BSZ440N10NS3GATMA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 29000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

TME:
Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 100V 5.3A Automotive 8-Pin TSDSON EP T/R

Newark:
# INFINEON  BSZ440N10NS3GATMA1  MOSFET Transistor, N Channel, 18 A, 100 V, 0.038 ohm, 10 V, 2.7 V