2SK0663GRL

2SK0663GRL N沟道结型场效应管 55V 30MA SOT323 代码 ZBR 低噪声系数 高栅漏电压

最大源漏极电压VdsDrain-Source Voltage | 55v \---|--- 栅源极击穿电压VBRGSGate-Source Voltage | -55v 漏极电流Vgs=0VIDSSDrain Current | 1~12ma 关断电压VgsoffGate-Source Cut-off Voltage | -5v 耗散功率PdPower Dissipation | 150mW/0.15W Description & Applications | •Silicon N-Channel Junction FET •For low-frequency amplification For switching •Low noise-figure NF •High gate to drain voltage VGDO •Low noise-figure NF •High gate to drain voltage VGDO 描述与应用 | •硅N沟道结型场效应管 •对于低频放大切换 •低噪声系数（NF） •高栅漏电压VGDO •低噪声系数（NF） •高栅漏电压VGDO