APT35GP120B2DQ2G

功率半导体功率模块 Power Semiconductors Power Modules

This fast-switching IGBT transistor from will be perfect in your circuit. Its maximum power dissipation is 543000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.