MAT03AH

低噪声，匹配双PNP晶体管 Low Noise, Matched Dual PNP Transistor

GENERAL DESCRIPTION

The MAT03 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance. Low noise characteristics 1 nV/√Hz max @ 1 kHz, high bandwidth 190 MHz typical, and low offset voltage 100 µV max, makes the MAT03 an excellent choice for demanding preamplifier applications. Tight current gain matching 3% max mismatch and high current gain 100 min, over a wide range of collector current, makes the MAT03 an excellent choice for current mirrors. A low value of bulk resistance typically 0.3 Ω also makes the MAT03 an ideal component for applications requiring accurate logarithmic conformance.

Each transistor is individually tested to data sheet specifications. Device performance is guaranteed at 25°C and over the extended industrial and military temperature ranges. To insure the long term stability of the matching parameters, internal protection diodes across the base-emitter junction clamp any reverse base emitter junction potential. This prevents a base-emitter break down condition which can result in degradation of gain and matching performance due to excessive breakdown current.

FEATURES

  Dual Matched PNP Transistor

  Low Offset Voltage: 100 mV max

  Low Noise: 1 nV/√Hz @ 1 kHz max

  High Gain: 100 min

  High Gain Bandwidth: 190 MHz typ

  Tight Gain Matching: 3% max

  Excellent Logarithmic Conformance: rBE = 0.3 Ω typ

  Available in Die F