FQU30N06L

LOGIC 60V N沟道MOSFET 60V LOGIC N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

Features

• 24A, 60V, RDSon= 0.039Ω@ VGS= 10V

• Low gate charge typical 15 nC

• Low Crss typical 50 pF

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 150oC maximum junction temperature rating

• Low level gate drive requirements allowing direct

operation form logic drivers

• RoHS Compliant