MJD340RLG

高电压功率晶体管 High Voltage Power Transistors

Compared to other transistors, the NPN general purpose bipolar junction transistor, developed by , can offer a high-voltage solution in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 3 V. Its maximum power dissipation is 1560 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 3 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.