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IXDF602SIATR

低边 IGBT MOSFET 灌:2A 拉:2A

低端 栅极驱动器 IC 反相,非反相 8-SOIC


欧时:
IC GATE DRVR LOW-SIDE 8SOIC


得捷:
2A 8 SOIC DUAL INV/NON-INVERTING


立创商城:
低边 IGBT MOSFET 灌:2A 拉:2A


贸泽:
Gate Drivers 2-A Dual Low-Side Ultrafast MOSFET


艾睿:
Drive a high voltage and high current line with a transistor a certain way with this IXDF602SIATR power driver manufactured by Ixys Corporation. This device has a maximum propagation delay time of 60 ns. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device has a minimum operating supply voltage of 4.5 V and a maximum of 35 V. This gate driver has an operating temperature range of -40 °C to 125 °C.


Verical:
Driver 2A 2-OUT Low Side Inv/Non-Inv 8-Pin SOIC T/R


IXDF602SIATR PDF数据文档
图片 型号 厂商 下载
IXDF602SIATR IXYS Semiconductor
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IXDF604SI IXYS Semiconductor
IXDF602SIA IXYS Semiconductor
IXDF604SIA IXYS Semiconductor
IXDF602D2TR IXYS Semiconductor
IXDF604SIATR IXYS Semiconductor
IXDF602PI IXYS Semiconductor
IXDF604PI IXYS Semiconductor
IXDF602SITR IXYS Semiconductor
IXDF602SI IXYS Semiconductor