STL9N60M2

N 沟道 600 V 4.8 A 760 mOhm MDmesh M2 功率 Mosfet 5 x 6

N-Channel 600V 4.8A Tc 48W Tc Surface Mount PowerFlat™ 5x6 HV

得捷:
MOSFET N-CH 600V 4.8A PWRFLAT56

艾睿:
Create an effective common drain amplifier using this STL9N60M2 power MOSFET from STMicroelectronics. Its maximum power dissipation is 48000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with mdmesh ii technology.

安富利:
Trans MOSFET N-CH 600V 4.8A 8-Pin PowerFLAT T/R

富昌:
N-沟道 600 V 4.8 A 860 mOhm 表面贴装 MDmesh M2 功率 MOSFET 5 x 6

Chip1Stop:
Trans MOSFET N-CH 600V 4.8A 8-Pin Power Flat EP T/R

Verical:
Trans MOSFET N-CH 600V 4.8A 8-Pin Power Flat EP T/R