PSMN1R7-60BS

NXP  PSMN1R7-60BS  晶体管, MOSFET, N沟道, 120 A, 60 V, 0.00166 ohm, 10 V, 3 V

The is a N-channel MOSFET suitable for standard level gate drive sources. It is designed and qualified for use in a wide range of load switching, server power supplies, DC-to-DC converters and domestic equipment applications.

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High efficiency due to low switching and conduction losses

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-55 to 175°C Junction temperature range