BUK7613-60E
NXP BUK7613-60E 晶体管, MOSFET, N沟道, 58 A, 60 V, 0.00944 ohm, 10 V, 3 V
The is a N-channel standard level MOSFET designed using TrenchMOS® technology. The device has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
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- Repetitive avalanche rated
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- Suitable for thermally demanding environments due to 175°C rating
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- True standard level gate with VGS th rating of greater than 1V at 175°C
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- -55 to 175°C Junction temperature range