BS62LV1600EIP55

BSI BRILLIANCE SEMICONDUCTOR BS62LV1600EIP55 SRAM, 16Mbit, 2M x 8Bit, 2.4V to 5.5V, TSOP, 44Pins, 55ns

**DESCRIPTION**

The BS62LV1600 is a high performance, very low power CMOS Static Random Access Memory organized as 2048K by 8 bits and operates form a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical CMOS standby current of 1.5uA at 3.0V/25OC and maximum access time of 55ns at 3.0V/85OC.

**FEATURES**

Wide VCC operation voltage : 2.4V ~ 5.5V

Very low power consumption :

      VCC = 3.0V Operation current : 46mA Max.at 55ns

                                              2mA Max.at 1MHz

                       Standby current : 1.5uA Typ. at 25 OC

      VCC = 5.0V Operation current : 115mA Max.at 55ns

                                              10mA Max.at 1MHz

                        Standby current : 6.0uA Typ. at 25OC

High speed access time :

   -55 55ns Max. at VCC : 3.0~5.5V

   -70 70ns Max. at VCC : 2.7~5.5V

Automatic power down when chip is deselected

Easy expansion with CE1, CE2 and OE options

Three state outputs and TTL compatible

Fully static operation

Data retention supply voltage as low as 1.5V