IPP65R095C7XKSA1

晶体管, MOSFET, N沟道, 24 A, 650 V, 0.084 ohm, 10 V, 3.5 V

Summary of Features:

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650V voltage

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Revolutionary best-in-class R DSon/package

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Reduced energy stored in output capacitance Eoss

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Lower gate charge Qg

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Space saving through use of smaller packages or reduction of parts

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12 years manufacturing experience in superjunction technology

Benefits:

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Improved safety margin and suitable for both SMPS and solar inverter applications

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Lowest conduction losses/package

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Low switching losses

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Better light load efficiency

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Increasing power density

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Outstanding CoolMOS™ quality

Target Applications:

 

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Telecom

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Server

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Solar

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PC power