SCT30N120

STMICROELECTRONICS  SCT30N120  功率场效应管, MOSFET, N沟道, 40 A, 1.2 kV, 0.08 ohm, 20 V, 2.6 V

N 通道碳化硅 SiC MOSFET，STMicroelectronics

碳化硅 SiC MOSFET 具有非常低的静电释放源接通电阻，用于 1200V 额定电压，并具有极佳的切换性能，可转换为更高效率和紧凑的系统。

欧时:
MOSFET N-Ch 45A 1200V SiC HiP247

得捷:
SICFET N-CH 1200V 40A HIP247

艾睿:
Trans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube

安富利:
Trans MOSFET N-CH 1200V 45A 3-Pin HiP247 Tube

富昌:
N-Channel 1200 V 100 mΩ 270 W 105 nC Flange Mount Power Mosfet - HiP247

Chip1Stop:
Trans MOSFET N-CH 1.2KV 45A 3-Pin HIP-247 Tube

TME:
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; 270W; HIP247™

Verical:
Trans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube

Newark:
Power MOSFET, N Channel, 40 A, 1.2 kV, 0.08 ohm, 20 V, 2.6 V