JANTX2N3584

NPN大功率硅晶体管 NPN HIGH POWER SILICON TRANSISTOR

Jump-start your electronic circuit design with this versatile NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 2500 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 250 V and a maximum emitter base voltage of 6 V.