IXGN72N60A3

Trans IGBT Chip N-CH 600V 160A 360000mW 4Pin SOT-227B

This IGBT transistor from Ixys Corporation is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 360000 mW. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

得捷:
IGBT MOD 600V 160A 360W SOT227B

贸泽:
IGBT Transistors 72 Amps 600V

艾睿:
This IXGN72N60A3 IGBT transistor from Ixys Corporation is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 360000 mW. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.