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X28C512JI-12

5V ,字节EEPROM可变 5V, Byte Alterable EEPROM

The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with ’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The X28C512, X28C513 feature the JEDEC approved pin out for byte wide memories, compatible with industry standard EPROMS.

Features

• Access Time: 90ns

• Simple Byte and Page Write

  - Single 5V supply

    • No external high voltages or VPP control circuits

  - Self-timed

    • No erase before write

    • No complex programming algorithms

    • No overerase problem

• Low Power CMOS

   - Active: 50mA

   - Standby: 500µA

• Software Data Protection

   - Protects data against system level inadvertent writes

• High Speed Page Write Capability

• Highly Reliable Direct Write™ Cell

   - Endurance: 100,000 write cycles

   - Data retention: 100 years

   - Early end of write detection

   - DATA polling

   - Toggle bit polling

• Two PLCC and LCC Pinouts

   - X28C512

     • X28C010 EPROM pin compatible

   - X28C513

     • Compatible with lower density EEPROMs

• Pb-Free Plus Anneal Available RoHS Compliant

X28C512JI-12 PDF数据文档
图片 型号 厂商 下载
X28C512JI-12 Intersil 英特矽尔
X28C512JIZ-12 Intersil 英特矽尔
X28C010NMB-15 Xicor
X28C010NM-12 Xicor
X28C010DMB-12 Intersil 英特矽尔
X28C512P-12 Xicor
X28C010FI-15 Intersil 英特矽尔
X28C010DMB-20 Intersil 英特矽尔
X28C010DM-15 Intersil 英特矽尔
X28C513JM-15 Intersil 英特矽尔
X28C010RM-15 Intersil 英特矽尔