2N6517TA
FAIRCHILD SEMICONDUCTOR 2N6517TA 单晶体管 双极, NPN, 400 V, 200 MHz, 625 mW, 20 hFE
The is a NPN Epitaxial Silicon Transistor offers 625mW maximum collector dissipation and 500mA collector current.
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- High voltage transistor
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- Complement to 2N6520
欧时:
### 高电压 NPN 晶体管，Fairchild Semiconductor### 双极晶体管，Fairchild Semiconductor双极性结点晶体管 BJT 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
贸泽:
双极晶体管 - 双极结型晶体管BJT NPN Si Transistor Epitaxial
艾睿:
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 Ammo
富昌:
2N6517 Series 350 V 500 mA NPN Through Hole Epitaxial Silicon Transistor-TO-92-3
Chip1Stop:
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 Ammo
Verical:
Trans GP BJT NPN 350V 0.5A 625mW 3-Pin TO-92 Ammo
Newark:
# FAIRCHILD SEMICONDUCTOR 2N6517TA Small Signal Diode, NPN, 400 V, 200 MHz, 625 mW, 20
Win Source:
TRANS NPN 350V 0.5A TO-92
