MW7IC18100GNR1

1990MHz, 100W, 28V GSM/GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS

The MW7IC18100N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2050 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulations including GSM EDGE and CDMA.

Final Application

• Typical GSM Performance: VDD = 28 Volts, IDQ1 = 180 mA, IDQ2 = 1000 mA,Pout = 100 Watts CW, 1805-1880 MHz or 1930-1990 MHz

  Power Gain  30 dB

  Power Added Efficiency  48%

GSM EDGE Application

• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 215 mA, IDQ2 =800 mA, Pout = 40 Watts Avg., 1805-1880 MHz or 1930-1990 MHz

   Power Gain  31 dB

   Power Added Efficiency   35%

   Spectral Regrowth @ 400 kHz Offset = -63 dBc

   Spectral Regrowth @ 600 kHz Offset = -80 dBc

   EVM  1.5% rms

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW Output Power

• Stable into a 5:1 VSWR. All Spurs Below -60 dBc @ 1 mW to 120 W CW Pout.

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source Scattering Parameters

• On-Chip Matching 50 Ohm Input, DC Blocked

• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function 1

• Integrated ESD Protection

• 225°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.