CXT5551

CXT5551 NPN三极管 180V 600mA/0.6a 100~300MHz 80~250 200mV/0.2V SOT-89 marking/标记 CXT5551 高电压放大器

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 180V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 160V 集电极连续输出电流ICCollector CurrentIC| 600mA/0.6A 截止频率fTTranstion FrequencyfT| 100~300MHz 直流电流增益hFEDC Current GainhFE| 80~250 管压降VCE（sat）Collector-Emitter Saturation Voltage| 200mV/0.2V 耗散功率PcPower Dissipation| 1.2W Description & Applications| SURFACE MOUNT NPN SILICON TRANSISTORS The CENTRAL SEMICONDUCTOR type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. 描述与应用| 表面贴装 NPN硅晶体管 中央半导体CXT5551型硅NPN晶体管由外延平面工艺，环氧树脂模压在一个表面贴装封装，高电压放大器应用设计制造。