RN1709JE

RN1709JE NPN+NPN复合带阻尼三极管 50V 100mA HEF=70 R1=47KΩ R2=22KΩ 100mW/0.1W SOT-553/ESV 标记XJ 开关电路 逆变器 接口电路 驱动电路

集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO | 50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO | 50V 集电极连续输出电流IC Collector CurrentIC | 100mA Q1基极输入电阻R1 Input ResistanceR1 | 47KΩ/Ohm Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 22KΩ/Ohm Q1电阻比R1/R2 Q1 Resistance Ratio | 2.1 Q2基极输入电阻R1 Input ResistanceR1 | 47KΩ/Ohm Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 22KΩ/Ohm Q2电阻比R1/R2 Q2 Resistance Ratio | 2.1 直流电流增益hFE DC Current GainhFE | 70 截止频率fT Transtion FrequencyfT | 250MHz 耗散功率Pc Power Dissipation | 100mW/0.1W Description & Applications | Features • TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Bias Resistor Built-in Transistor • Two devices are incorporated into an Extreme-Super-Mini 5 pin package. • Incorporating a bias resistor into a transistor reduces parts count.Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. • A wide range of resistor values is available for use in various circuit designs. • Complementary to RN2707JE~RN2709JE APPLICATIONS • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 描述与应用 | 特点 •晶体管的硅NPN外延式（PCT的进程）（偏置电阻内置晶体管） •两个设备都纳入一个极端超小型封装（5针）。 •将偏置电阻晶体管，减少了部件数量。减少部件数量，使制造比以往更紧凑的设备和降低装配成本。 •广泛的电阻值可用于在各种电路设计。 •互补到RN2707JE〜RN2709JE的 应用 •开关，逆变电路，接口电路和驱动器电路应用