JANTXV2N6678

NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR

Implement this NPN GP BJT from to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor"s maximum emitter base voltage is 8 V. Its maximum power dissipation is 6000 mW. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 8 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.