2SK2765-01

TO-3P N-CH 800V 7A

**Features:**

* FAP-III = Logic Level, High Avalanche Ruggedness

* FAP-IIS = VGS ±35 V, VGSth 4.0 ±0.5 V

* FAP-IIA = Reduced Turn Off Time

* FAP-IIIBH = High Speed Non Logic

* FAP-IIIB = Logic Level, VGSth 1.5 ±0.5 V

* FAP-G = Ultra Fast Switching

* Trench Gate Series = Ultra Low On-Resistance`

Allied Electronics:
MOSFET, Power; N-Ch; VDSS 800V; RDSON 1.62 Ohms; ID +/-7A; TO-3P; PD 125W; VGS +/-35V

Win Source:
N-channel MOS-FET