IPD65R190C7

INFINEON  IPD65R190C7  功率场效应管, MOSFET, N沟道, 13 A, 650 V, 0.168 ohm, 10 V, 3.5 V

The is a 650V N-channel CoolMOS™ Power MOSFET providing the world"s lowest RDS on with low switching losses and efficiency improvements over the full load range. The new CoolMOS™ C7 series offers a ~50% reduction in turn-off losses Eoss compared to the CoolMOS™ CP, offering a GaN-like level of performance in PFC, TTF and other hard-switching topologies. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.

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Reduced energy stored in output capacitance Eoss

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Lower gate charge

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Space-saving through reduction of parts

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Improved safety margin

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Lowest conduction losses

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Low switching losses

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Better light load efficiency

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Increasing power density