2N5416S

PNP小功率硅晶体管 PNP LOW POWER SILICON TRANSISTOR

This family of 2N5415S and epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications.  These devices are also available in the longer leaded TO-5 and low profile U4 and UA packaging.

艾睿:
Thanks to Microsemi, your circuit can handle high levels of voltage using the PNP 2N5416S general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 750 mW. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.

Verical:
Trans GP BJT PNP 300V 1A 750mW 3-Pin TO-39 Bag