IXBF9N160G

IGBT Transistors 9A 1600V 1600V 9A

IGBT - 1600 V 7 A 70 W 通孔 ISOPLUS i4-PAC™

得捷:
IGBT 1600V 7A 70W I4PAC

贸泽:
IGBT Transistors 9 Amps 1600V 1600V 9A

艾睿:
The IXBF9N160G IGBT transistor from Ixys Corporation is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 1600 V. Its maximum power dissipation is 70000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.