FKV660S

FKV660S N沟道MOSFET 6A TO-263 marking/标记 FKV660S 低栅极电荷/高速开关/极低的RDS

最大源漏极电压Vds Drain-Source Voltage| \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 60V 最大漏极电流Id Drain Current| 6A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 0.014Ω/Ohm 2.5A,10V 开启电压Vgs（th） Gate-Source Threshold Voltage| 1.5V 耗散功率Pd Power Dissipation| 6W Description & Applications| 描述与应用|