BCV27E6327HTSA1

达林顿晶体管 NPN Silicn Darlingtn TRANSISTOR

Summary of Features:

.

 High collector current

 High current gain

 Complementary types: BCV26, BCV46 PNP

 Pb-free RoHS compliant package

 Qualified according AEC Q101

得捷:
TRANS NPN DARL 30V 0.5A SOT23

贸泽:
达林顿晶体管 NPN Silicn Darlingtn TRANSISTOR

艾睿:
Are you looking for an amplified current signal in your circuit? The NPN BCV27E6327HTSA1 Darlington transistor from Infineon Technologies yields a much higher gain than other transistors. This Darlington transistor array&s;s maximum emitter base voltage is 10 V, while its maximum base emitter saturation voltage is 1.5@0.1mA@100mA V. This product&s;s maximum continuous DC collector current is 0.5 A, while its minimum DC current gain is 4000@0.1mA@1 V|10000@10mA@5V|20000@100mA@5V|2000@0.5A@5V. It has a maximum collector emitter saturation voltage of 1@0.1mA@100mA V. Its maximum power dissipation is 360 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 10 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.

安富利:
Trans Darlington NPN 30V 0.5A 3-Pin SOT-23 T/R

Chip1Stop:
Trans Darlington NPN 30V 0.5A Automotive 3-Pin SOT-23 T/R

Verical:
Trans Darlington NPN 30V 0.5A 360mW Automotive 3-Pin SOT-23 T/R

Win Source:
TRANS NPN DARL 30V 0.5A SOT-23