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RN1101MFV

RN1101MFV 带阻NPN三极管 50V 100mA/0.1A R1=R2=4.7k 增益30 SOT-723/VESM marking/标记 XA 开关 逆变电路 接口电路和驱动器电路应用

集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO | 50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO | 50V 集电极连续输出电流IC Collector CurrentIC | 100mA/0.1A 基极输入电阻R1 Input ResistanceR1 | 4.7KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 4.7KΩ/Ohm 电阻比R1/R2 Resistance Ratio | 1 直流电流增益hFE DC Current GainhFE | 30 截止频率fT Transtion FrequencyfT | 耗散功率Pc Power Dissipation | 0.15W/150mW Description & Applications | Features Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. A wide range of resistor values is available for use in various circuits. Complementary to the RN2101MFV 描述与应用 | 特性 开关,逆变电路,接口电路和驱动器电路应用 适合非常高密度安装超小型封装, 结合到晶体管偏置电阻器减少部件的数量,所以能够制造比更紧凑设备并降低装配成本。 宽范围的电阻值是可用于在各种电路。 对管是RN2101MFV

RN1101MFV PDF数据文档
图片 型号 厂商 下载
RN1101MFV Toshiba 东芝
RN112-0.8-02 Schaffner
RN114-1.2-02 Schaffner
RN1110CTTPL3 Toshiba 东芝
RN1102MFV,L3F Toshiba 东芝
RN1117MFVTPL3 Toshiba 东芝
RN1114MFVTPL3 Toshiba 东芝
RN1112MFVTPL3 Toshiba 东芝
RN1102MFVTL3,T Toshiba 东芝
RN1130MFVTL3,T Toshiba 东芝
RN1132MFVTPL3 Toshiba 东芝