ADG636YRUZ-REEL
模拟开关 IC 2:1 400MHz 2.2 Ohm CMOS Dual SPDT
Product Details
The ADG636 is a monolithic device, comprising two indepen-dently selectable CMOS single pole, double throw SPDT switches. When on, each switch conducts equally well in both directions.
The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7 V to +5.5 V.
This switch offers ultralow charge injection of ±1.5 pC over the entire signal range and leakage current of 10 pA typical at 25°C. In addition, it offers on resistance of 85 Ω typical, which is matched to within 2 Ω between channels. The ADG636 also has low power dissipation yet is capable of high switching speeds.
The ADG636 exhibits break-before-make switching action and is available in a 14-lead TSSOP package.
**Product Highlights**
1. Ultralow charge injection. QINJ: ±1.5 pC typical over the full signal range
2. Leakage current <0.25 nA maximum at 85°C
3. Dual ±2.7 V to ±5 V or single +2.7 V to +5.5 V supply
4. Automotive temperature range: −40°C to +125°C
5. Small 14-lead TSSOP package
**Applications**
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- Automatic test equipment
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- Data acquisition systems
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- Battery-powered instruments
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- Communication systems
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- Sample-and-hold systems
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- Remote-powered equipment
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- Audio and video signal routing
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- Relay replacement
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- Avionics
### Features and Benefits
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- 1 pC Charge Injection
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- ±2.7 V to ±5.5 V Dual Supply
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- +2.7 V to +5.5 V Single Supply
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- Automotive Temperature Range:
–40°C to +125°C
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- 100 pA Maximum @ 25°C Leakage Currents
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- 85 Ω Typical On Resistance
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- Rail-to-Rail Operation
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- Fast Switching Times
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- Typical Power Consumption <0.1 µW
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- TTL/CMOS Compatible Inputs
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- 14-Lead TSSOP Package
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