PD85006L-E

RF功率晶体管LDMOST塑料系列 RF power transistor the LdmoST plastic family

Description

The is a common source N-channel, enhancement-mode lateral Field Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85006L-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in leadless SMD plastic RF power package , PowerFLAT™. PD85006L-E’s superior linearity performance makes it an ideal solution for mobile radio applications.

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 6 W with 15 dB gain @ 870 MHz / 13.6 V

■ Plastic package

■ ESD protection

■ In compliance with the 2002/95/EC european directive