IKW15T120FKSA1

Infineon IKW15T120FKSA1 IGBT, Vce=1200 V, 30 A, 3引脚 TO-247封装

TrenchStop IGBT ，电压 1100 至 1600V

一系列 Infineon 的 IGBT 晶体管，带电压额定值为 1100 至 1600V 的集电极-发射极，采用 TrenchStop™ 技术。该系列包括带集成高速、快速恢复防并联二极管的设备。

• 集电极-发射极电压范围 1100 至 1600V

• 极低 VCEsat

• 低关闭损耗

• 短尾线电流

• 低 EMI

• 最高接点温度 175°C

得捷:
IGBT 1200V 30A 110W TO247-3

欧时:
Infineon IKW15T120FKSA1 IGBT, Vce=1200 V, 30 A, 3引脚 TO-247封装

贸泽:
IGBT 晶体管 Infineon"s TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled D

e络盟:
单晶体管, IGBT, 30 A, 1.7 V, 110 W, 1.2 kV, TO-247, 3 引脚

艾睿:
Trans IGBT Chip N-CH 1200V 30A 110000mW Automotive 3-Pin3+Tab TO-247 Tube

Chip1Stop:
Trans IGBT Chip N-CH 1.2KV 30A 3-Pin3+Tab TO-247

Verical:
Trans IGBT Chip N-CH 1200V 30A 110000mW Automotive 3-Pin3+Tab TO-247 Tube