BSZ900N20NS3GATMA1

INFINEON  BSZ900N20NS3GATMA1  晶体管, MOSFET, N沟道, 15.2 A, 200 V, 0.077 ohm, 10 V, 3 V

OptiMOS™3 功率 MOSFET，100V 及以上

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSZ900N20NS3GATMA1, 15.2 A, Vds=200 V, 8引脚 TDSON封装

得捷:
MOSFET N-CH 200V 15.2A 8TSDSON

立创商城:
N沟道 200V 15.2A

贸泽:
MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3

e络盟:
功率场效应管, MOSFET, N沟道, 200 V, 15.2 A, 0.077 ohm, TSDSON, 表面安装

艾睿:
This BSZ900N20NS3GATMA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 62500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 200V 15.2A 8-Pin TSDSON T/R

TME:
Transistor: N-MOSFET; unipolar; 200V; 15.2A; 62.5W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 200V 15.2A 8-Pin TSDSON EP T/R

Newark:
# INFINEON  BSZ900N20NS3GATMA1  MOSFET Transistor, N Channel, 15.2 A, 200 V, 0.077 ohm, 10 V, 3 V