BFG520W

NPN 9 GHz宽带晶体管 NPN 9 GHz wideband transistors

DESCRIPTION

NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package.

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures excellent reliability.

APPLICATIONS

RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones CT2, CT3, PCN, DECT, etc., radar detectors, pagers, satellite television tuners SATV and repeater amplifiers in fibre-optic systems.