BSC0902NSATMA1

INFINEON  BSC0902NSATMA1  晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0022 ohm, 10 V, 1.2 V

表面贴装型 N 通道 30 V 24A（Ta），100A（Tc） 2.5W（Ta），48W（Tc） PG-TDSON-8-6

欧时:
MOSFET OptiMOS 30V 100A 2.6mOhm TDSON8

得捷:
MOSFET N-CH 30V 24A/100A TDSON

贸泽:
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS

e络盟:
功率场效应管, MOSFET, N沟道, 30 V, 100 A, 0.0022 ohm, SuperSOT, 表面安装

艾睿:
Amplify electronic signals and switch between them with the help of Infineon Technologies&s; BSC0902NSATMA1 power MOSFET. Its maximum power dissipation is 2500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans MOSFET N-CH 30V 24A 8-Pin TDSON T/R

Chip1Stop:
Trans MOSFET N-CH 30V 24A 8-Pin TDSON EP T/R

TME:
Transistor: N-MOSFET; unipolar; 30V; 91A; 48W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 30V 24A 8-Pin TDSON EP T/R

Newark:
# INFINEON  BSC0902NSATMA1  MOSFET Transistor, N Channel, 100 A, 30 V, 0.0022 ohm, 10 V, 2 V