IXGR72N60B3H1

Trans IGBT Chip N-CH 600V 80A 200000mW 3Pin3+Tab ISOPLUS 247

IGBT PT 600 V 75 A 200 W 通孔 ISOPLUS247™

得捷:
IGBT 600V 75A 200W ISOPLUS247

艾睿:
The IXGR72N60B3H1 IGBT transistor from Ixys Corporation is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 200000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

Verical:
Trans IGBT Chip N-CH 600V 80A 200000mW 3-Pin3+Tab ISOPLUS 247