锐单电子商城 , 一站式电子元器件采购平台!
  • 电话:400-990-0325

MMBTA14LT1HTSA1

SOT-23 NPN 30V 0.3A

If you require a higher current gain value in your circuit, then the NPN Darlington transistor, developed by Technologies, is for you. This product"s maximum continuous DC collector current is 0.3 A, while its minimum DC current gain is 10000@10mA@5 V|20000@100mA@5V. It has a maximum collector emitter saturation voltage of 1.5@0.1mA@100mA V. This Darlington transistor array"s maximum emitter base voltage is 10 V, while its maximum base emitter saturation voltage is 2@0.1mA@100mA V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 10 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.

MMBTA14LT1HTSA1 PDF数据文档
图片 型号 厂商 下载
MMBTA14LT1HTSA1 Infineon 英飞凌
MMBTA63LT1G ON Semiconductor 安森美
MMBTA64LT1G ON Semiconductor 安森美
MMBT6427 Fairchild 飞兆/仙童
MMBT6427LT1G ON Semiconductor 安森美
MMBTA13LT1G ON Semiconductor 安森美
MMBTA14 Fairchild 飞兆/仙童
MMBTA14LT1G ON Semiconductor 安森美
MMBT4401LT3G ON Semiconductor 安森美
MMBT3906LT3G ON Semiconductor 安森美
MMBT3906LT1G ON Semiconductor 安森美