PMXB120EPE
NXP PMXB120EPE 晶体管, MOSFET, P沟道, -2.4 A, -30 V, 0.1 ohm, -10 V, -1.5 V
The is a P-channel enhancement-mode FET in a leadless ultra-small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in high-side load switch and charging switch for portable devices, power management in battery driven portables, LED driver and DC-to-DC converter applications.
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- Leadless ultra small and ultra thin SMD plastic package
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- Exposed drain pad for excellent thermal conduction
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- 1kV ESD protection HBM
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- 100mR Drain-source ON-state resistance RDS ON
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- -55 to 150°C Junction temperature range