STB6NK60ZT4

STMICROELECTRONICS  STB6NK60ZT4  功率场效应管, MOSFET, N沟道, 3 A, 600 V, 1 ohm, 10 V, 3.75 V

N 通道 MDmesh™ SuperMESH™，250V 至 650V，STMicroelectronics

得捷:
MOSFET N-CH 600V 6A D2PAK

立创商城:
STB6NK60ZT4

欧时:
STMicroelectronics MDmesh, SuperMESH 系列 Si N沟道 MOSFET STB6NK60ZT4, 6 A, Vds=600 V, 3引脚 D2PAK TO-263封装

e络盟:
功率场效应管, MOSFET, N沟道, 600 V, 3 A, 1 ohm, TO-263 D2PAK, 表面安装

艾睿:
Increase the current or voltage in your circuit with this STB6NK60ZT4 power MOSFET from STMicroelectronics. Its maximum power dissipation is 110000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes supermesh technology.

安富利:
Trans MOSFET N-CH 600V 6A 3-Pin2+Tab D2PAK T/R

Chip1Stop:
Trans MOSFET N-CH 600V 6A 3-Pin2+Tab D2PAK T/R

TME:
Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; D2PAK

Verical:
Trans MOSFET N-CH 600V 6A 3-Pin2+Tab D2PAK T/R

Newark:
# STMICROELECTRONICS  STB6NK60ZT4  Power MOSFET, N Channel, 3 A, 600 V, 1 ohm, 10 V, 3.75 V

儒卓力:
**N-CH 600V 6A 1200mOhm TO263-3 **

Win Source:
MOSFET N-CH 600V 6A D2PAK