IRF634NS

MOSFET N-CH 250V 8A D2PAK

Description

Fifth Generation HEXFET® Power MOSFETs from utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Ease of Paralleling

l Simple Drive Requirements