JANTX2N5415

PNP小功率硅晶体管 PNP LOW POWER SILICON TRANSISTOR

This family of 2N5415 and 2N5416 epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications.  These devices are also available in TO-39 and low profile U4 and UA packaging.

艾睿:
Look no further than Microsemi&s;s PNP JANTX2N5415 general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 750 mW. It has a maximum collector emitter voltage of 200 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.

Verical:
Trans GP BJT PNP 200V 1A 750mW 3-Pin TO-5 Bag

Win Source:
TRANS PNP 200V 1A TO-5